PART |
Description |
Maker |
NAND01G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
TQ8034 |
CONNECTOR ACCESSORY 1.6 Gbit/sec 3.3V 34x34 Digital Crosspoint Switch
|
TriQuint Semiconductor,Inc. TRIQUINT[TriQuint Semiconductor]
|
VSC7121 |
QUAD PORT BYPASS CIRCUIT FOR 1.0625 GBIT/SEC FIBRE CHANNEL ARBITRATED LOOP DISK ARRAYS
|
Vitesse Semiconductor Corporation
|
VSC7122 |
Quad Port Bypass Circuit for 1.0625 Gbit/sec Fibre Channel Arbitrated Loop Disk Arrays
|
Vitesse Semiconductor Corpo...
|
NAND01G-B |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
NAND02GW3B2BN1E NAND02GW3B2BN1F NAND02GW3B2BN6E NA |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
NAND08GW4B2CN6E NAND08G-BXC NAND08GR3B2C NAND08GR3 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
|
Numonyx B.V http://
|
V23838-M305-M56 |
Transceivers by Form-factor MSA - SFP Multimode 850 nm; 2.125/ 1.062 Gbit/s FC; 1.25 Gbit/s GBE; LC Connector
|
Infineon
|
LH28F400BVE-TL85 LHF40V01 |
4MB (512KB x 8/256KB x 16) SmartVoltage Flash Memory(4M512Kx 8/256K位x 16)闪速存储器) Photoelectric Sensor; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Time Range:1.5 sec. to 15 sec.; Timing Function:On-Delay and Off-Delay 4分快闪记忆体
|
Sharp Corporation Sharp, Corp.
|
W523AXXX W523A008 W523A010 W523A012 W523A015 W523A |
Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (120 sec) Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (100 sec) Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (80 sec) Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (70 sec) Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (60 sec) Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (50 sec) Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (40 sec) Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (30 sec) Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (25 sec) Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (20 sec) Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (15 sec) Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (12 sec) Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (10 sec) Voice Synthesizer w/4 triggers, 5 STOPs, R0-R3, µC Interface, PWM/DAC (8 sec) HIGH FIDELITY POWER SPEECH
|
Winbond Electronics WINBOND[Winbond]
|
ISD5116PY ISD5116EY |
IC VOICE REC/PLAY 8-16MN 28-DIP 960 SEC, SPEECH SYNTHESIZER WITH RCDG, PDIP28 960 SEC, SPEECH SYNTHESIZER WITH RCDG, PDSO28
|
Winbond Electronics, Corp. WINBOND ELECTRONICS CORP
|
TQ8016 TQ8016-M |
1.3 gigabit/sec crosspoint switch 1.3 Gigabit/sec 16x16 Digital ECL Crosspoint Switch
|
TRIQUINT[TriQuint Semiconductor]
|
|